Thisarticlehasbeenacceptedforinclusioninafutureissueofthisjournal.Contentisfinalaspresented,withtheexceptionofpagination.IEEETRANSACTIONSONELECTRONDEVICES1ReviewandOutlookonGaNandSiCPowerDevices:IndustrialState-of-the-Art,Applications,andPerspectivesM.Buffolo,Member,IEEE,D.Favero,GraduateStudentMember,IEEE,A.Marcuzzi,GraduateStudentMember,IEEE,C.DeSanti,Member,IEEE,G.Meneghesso,Fellow,IEEE,E.Zanoni,LifeFellow,IEEE,andM.Meneghini,SeniorMember,IEEEAbstract—Wepresentacomprehensivereviewandout-acarefuloptimizationofperformanceandtheuseofinno-lookofsiliconcarbide(SiC)andgalliumnitride(GaN)vativeoptimizationtools,areunderlined.transistorsavailableonthemarketfo...